Suchergebnisse
Katalog
Mehr
Suchmaske
Suchergebnisse einschränken oder erweitern
Aktive Suchfilter
Weniger Treffer
Art der Quelle
Thema
- temperature 16 Treffer
- mosfet circuits 15 Treffer
- hemts 13 Treffer
- gallium arsenide 12 Treffer
- silicon 12 Treffer
-
45 weitere Werte:
- current measurement 11 Treffer
- leakage current 11 Treffer
- mosfets 11 Treffer
- silicon carbide 11 Treffer
- electrodes 10 Treffer
- indium gallium arsenide 10 Treffer
- indium phosphide 10 Treffer
- modfets 10 Treffer
- circuits 9 Treffer
- etching 8 Treffer
- fets 8 Treffer
- electrons 7 Treffer
- testing 7 Treffer
- bipolar transistors 6 Treffer
- charge carrier processes 6 Treffer
- cmos technology 6 Treffer
- current density 6 Treffer
- degradation 6 Treffer
- fabrication 6 Treffer
- frequency 6 Treffer
- heterojunction bipolar transistors 6 Treffer
- impact ionization 6 Treffer
- mos devices 6 Treffer
- substrates 6 Treffer
- thin film transistors 6 Treffer
- time measurement 6 Treffer
- transconductance 6 Treffer
- annealing 5 Treffer
- capacitance 5 Treffer
- cutoff frequency 5 Treffer
- dielectric substrates 5 Treffer
- electron mobility 5 Treffer
- frequency measurement 5 Treffer
- pulse measurements 5 Treffer
- radio frequency 5 Treffer
- resonant tunneling devices 5 Treffer
- stress 5 Treffer
- temperature dependence 5 Treffer
- tunneling 5 Treffer
- dielectric devices 4 Treffer
- doping 4 Treffer
- electrical resistance measurement 4 Treffer
- electron traps 4 Treffer
- mos capacitors 4 Treffer
- power generation 4 Treffer
Inhaltsanbieter
94 Treffer
-
In: IEEE Electron Device Letters, Jg. 43 (2022-04-01), Heft 4, S. 623-626Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 24 (2003-02-01), Heft 2, S. 81-83Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 11 (1990-10-01), Heft 10, S. 439-441Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 44 (2023-11-01), Heft 11, S. 1817-1820Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 44 (2023-10-01), Heft 10, S. 1784-1787Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 44 (2023-10-01), Heft 10, S. 1736-1739Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 43 (2022-10-01), Heft 10, S. 1760-1763Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 43 (2022-10-01), Heft 10, S. 1736-1739Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 43 (2022-10-01), Heft 10, S. 1764-1767Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 43 (2022-10-01), Heft 10, S. 1709-1712Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 43 (2022-10-01), Heft 10, S. 1752-1755Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 29 (2008-07-01), Heft 7, S. 788-790Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 27 (2006-11-01), Heft 11, S. 908-910Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 27 (2006-11-01), Heft 11, S. 917-919Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 27 (2006-10-01), Heft 10, S. 796-798Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 27 (2006-10-01), Heft 10, S. 834-836Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 27 (2006-10-01), Heft 10, S. 843-845Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 17 (1996-04-01), Heft 4, S. 178-180Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 17 (1996-03-01), Heft 3, S. 139-141Online academicJournalZugriff:
-
In: IEEE Electron Device Letters, Jg. 12 (1991-08-01), Heft 8, S. 410-412Online academicJournalZugriff: