Low phase-noise high output power 176-GHz voltage-controlled oscillator in a 130-nm BiCMOS technology.
In: IET Microwaves, Antennas & Propagation (Wiley-Blackwell), Jg. 13 (2019-11-01), Heft 14, S. 2490-2494
Online
academicJournal
Zugriff:
In this study, the authors present the design and measurement results of a voltage-controlled oscillator (VCO) that is based on a Colpitts core topology and a cascade output buffer. The circuit has a centre frequency of 176 GHz and is implemented in a 130 nm SiGe BiCMOS technology provided by IHP foundry. The VCO is a differential fundamental wave tunable oscillator that makes use of a transistor-based LC-resonator. On-wafer measurements show a tuning range of about 5% from 171 to 179.5 GHz. The circuit achieves a maximum output power of 7.3 dBm when biased at 1.6 V and 6.5 dBm if biased at 1.4 V, both with an efficiency of~ 6.6%. DC power consumption is 82 and 52 mW, respectively. The measured phase-noise of the VCO is - 110 dBc/Hz at 10 MHz offset. The VCO demonstrates state-of-the-art performance at these frequencies with very good performance in term of output power, efficiency linearity, phase noise and compactness; in addition, thanks to the proposed architecture it shows high integrability at the system level. [ABSTRACT FROM AUTHOR]
Titel: |
Low phase-noise high output power 176-GHz voltage-controlled oscillator in a 130-nm BiCMOS technology.
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Autor/in / Beteiligte Person: | Bello, Habeeb ; Pantoli, Leonardo ; Ng, Herman Jalli ; Kissinger, Dietmar ; Leuzzi, Giorgio |
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Zeitschrift: | IET Microwaves, Antennas & Propagation (Wiley-Blackwell), Jg. 13 (2019-11-01), Heft 14, S. 2490-2494 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 1751-8725 (print) |
DOI: | 10.1049/iet-map.2019.0397 |
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