웨이퍼상 D-대역 회로의 3차상호변조왜곡측정. (Korean)

In this paper, we propose a method for measuring the third-order intermodulation distortion (IMD3) components of circuits in the D-band (110∼170 GHz) on wafers. Two independent D-band signal sources were combined using a directional coupler to generate a two-tone signal. Frequency downconversion mixers and attenuators were used to minimize the impact of the setup on IMD3 measurements of the device under test. The powers of both the fundamental frequency and IMD3 components of a D-band prototype power amplifier chip were measured which enhanced the reliability by comparing with the magnitude of the IMD3 generated in the setup. [ABSTRACT FROM AUTHOR]

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