Atomic layer deposition of CuxS
In: Journal de Physique IV - Proceedings, Jg. 11 (2001-09-01), Heft 1, S. Pr3-1103- (110331105S.)
serialPeriodical
Zugriff:
Thin films of CuxS have been deposited by atomic layer deposition using copper(II) bistetramethylheptanedionate (Cu(thd)2) and hydrogen sulphide (H2S) as precursors. Self-limiting growth was obtained between 125°C and 250°C at a pressure of 2 mbar. Dependent on the temperature different crystalline phases formed. Below 175°C CuS (covellite) was obtained, while between 175°C and 300°C Cu1.8S (digenite) was deposited. The growth rate per cycle correlated to the deposited crystalline phase, the Cu(thd)2pulse length, and the reactor pressure. Typical growth rates were 0.15 Å/cycle for Cu1.8S and 0.4 Å/cycle for CuS. It appears that the process is determined by Cu(thd)2adsorption. Films were polycrystalline and consisted of 100 nm particles that grow in columns perpendicular to the surface.
Titel: |
Atomic layer deposition of CuxS
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Autor/in / Beteiligte Person: | Reijnen, L. ; Meester, B. ; Goossens, A. ; Schoonman, J. |
Zeitschrift: | Journal de Physique IV - Proceedings, Jg. 11 (2001-09-01), Heft 1, S. Pr3-1103- (110331105S.) |
Veröffentlichung: | 2001 |
Medientyp: | serialPeriodical |
ISSN: | 1155-4339 (print) ; 1764-7177 (print) |
DOI: | 10.1051/jp4:20013138 |
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