Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs
In: IEEE Electron Device Letters, Jg. 44 (2023-10-01), Heft 10, S. 1704-1707
Online
academicJournal
Zugriff:
Titel: |
Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs
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Autor/in / Beteiligte Person: | Saha, N.C. ; Shiratsuchi, T. ; Oishi, T. ; Kasu, M. |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 44 (2023-10-01), Heft 10, S. 1704-1707 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0741-3106 (print) ; 1558-0563 (print) |
DOI: | 10.1109/LED.2023.3305302 |
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