A Novel SiC Trench MOSFET Embedding Auto-Adjust Source-Potential Region With Switching Oscillation Suppression
In: IEEE Electron Device Letters, Jg. 44 (2023-11-01), Heft 11, S. 1817-1820
Online
academicJournal
Zugriff:
Titel: |
A Novel SiC Trench MOSFET Embedding Auto-Adjust Source-Potential Region With Switching Oscillation Suppression
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Autor/in / Beteiligte Person: | Sun, R. ; Deng, X. ; Li, X. ; Wu, H. ; Wen, Y. ; Zhang, B. |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 44 (2023-11-01), Heft 11, S. 1817-1820 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0741-3106 (print) ; 1558-0563 (print) |
DOI: | 10.1109/LED.2023.3317187 |
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