A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application
In: IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia); (2023-08-27) S. 1-3
Online
Konferenz
Zugriff:
Titel: |
A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application
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Autor/in / Beteiligte Person: | Hung, Chia Lung ; Hsiao, Yi Kai ; Kuo, Hao Chung |
Link: | |
Quelle: | IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia); (2023-08-27) S. 1-3 |
Veröffentlichung: | 2023 |
Medientyp: | Konferenz |
ISBN: | 979-8-3503-3711-2 (print) |
ISSN: | 2831-3712 (print) |
DOI: | 10.1109/WiPDAAsia58218.2023.10261901 |
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