40nm Ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU
In: 15th International Symposium on Quality Electronic Design (ISQED); (2014-03-01) S. 24-31
Online
Konferenz
Zugriff:
Titel: |
40nm Ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU
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Autor/in / Beteiligte Person: | Yokoyama, Yoshisato ; Ishii, Yuichiro ; Kojima, Hidemitsu ; Miyanishi, Atsushi ; Tsujihashi, Yoshiki ; Asayama, Shinobu ; Shiba, Kazutoshi ; Tanaka, Koji ; Fukuda, Tatsuya ; Nii, Koji ; Yanagisawa, Kazumasa |
Link: | |
Quelle: | 15th International Symposium on Quality Electronic Design (ISQED); (2014-03-01) S. 24-31 |
Veröffentlichung: | 2014 |
Medientyp: | Konferenz |
ISBN: | 978-1-4799-3945-9 (print) ; 978-1-4799-3946-6 (print) |
ISSN: | 1948-3287 (print) ; 1948-3295 (print) |
DOI: | 10.1109/ISQED.2014.6783302 |
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