17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies
In: IEEE International Solid- State Circuits Conference - (ISSCC); (2015-02-01) S. 1-3
Online
Konferenz
Zugriff:
Titel: |
17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies
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Autor/in / Beteiligte Person: | Fujiwara, Hidehiro ; Wang, Li-Wen ; Chen, Yen-Huei ; Lin, Kao-Cheng ; Sun, Dar ; Wu, Shin-Rung ; Liaw, Jhon-Jhy ; Lin, Chih-Yung ; Chiang, Mu-Chi ; Liao, Hung-Jen ; Wu, Shien-Yang ; Chang, Jonathan |
Link: | |
Quelle: | IEEE International Solid- State Circuits Conference - (ISSCC); (2015-02-01) S. 1-3 |
Veröffentlichung: | 2015 |
Medientyp: | Konferenz |
ISBN: | 978-1-4799-6223-5 (print) ; 978-1-4799-6224-2 (print) |
ISSN: | 0193-6530 (print) ; 2376-8606 (print) |
DOI: | 10.1109/ISSCC.2015.7063051 |
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