Corrections to “In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ [Mar 17 353-355]
In: IEEE Electron Device Letters, Jg. 39 (2018-02-01), Heft 2, S. 316
Online
academicJournal
Zugriff:
Titel: |
Corrections to “In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ [Mar 17 353-355]
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Autor/in / Beteiligte Person: | Gupta, C. ; Lund, C. ; Chan, S.H. ; Agarwal, A. ; Liu, J. ; Enatsu, Y. ; Keller, S. ; Mishra, U.K. |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 39 (2018-02-01), Heft 2, S. 316 |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
ISSN: | 0741-3106 (print) ; 1558-0563 (print) |
DOI: | 10.1109/LED.2017.2788598 |
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