High-Mobility Normally OFF Al2O3/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure
In: IEEE Electron Device Letters, Jg. 39 (2018-11-01), Heft 11, S. 1720-1720
Online
academicJournal
Zugriff:
Titel: |
High-Mobility Normally OFF Al2O3/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure
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Autor/in / Beteiligte Person: | Zhang, J. ; He, L. ; Li, L. ; Ni, Y. ; Que, T. ; Liu, Z. ; Wang, W. ; Zheng, J. ; Huang, Y. ; Chen, J. ; Gu, X. ; Zhao, Y. ; Wu, Z. ; Liu, Y. |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 39 (2018-11-01), Heft 11, S. 1720-1720 |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
ISSN: | 0741-3106 (print) ; 1558-0563 (print) |
DOI: | 10.1109/LED.2018.2872637 |
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