RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates
In: IEEE Electron Device Letters, Jg. 40 (2019), Heft 1, S. 17-20
Online
academicJournal
Zugriff:
Titel: |
RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates
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Autor/in / Beteiligte Person: | Baca, A.G. ; Klein, B.A. ; Wendt, J.R. ; Lepkowski, S.M. ; Nordquist, C.D. ; Armstrong, A.M. ; Allerman, A.A. ; Douglas, E.A. ; Kaplar, R.J. |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 40 (2019), Heft 1, S. 17-20 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 0741-3106 (print) ; 1558-0563 (print) |
DOI: | 10.1109/LED.2018.2880429 |
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