175V, > 5.4 MV/cm, $50\ \mathrm{m}\Omega.\text{cm}^{2}$ at 250°C Diamond MOSFET and its reverse conduction
In: 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD); (2019-05-01) S. 151-154
Online
Konferenz
Zugriff:
Titel: |
175V, > 5.4 MV/cm, $50\ \mathrm{m}\Omega.\text{cm}^{2}$ at 250°C Diamond MOSFET and its reverse conduction
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Autor/in / Beteiligte Person: | Masante, Cedric ; Pernot, Julien ; Letellier, Juliette ; Eon, David ; Rouger, Nicolas |
Link: | |
Quelle: | 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD); (2019-05-01) S. 151-154 |
Veröffentlichung: | 2019 |
Medientyp: | Konferenz |
ISBN: | 978-1-7281-0580-2 (print) ; 978-1-7281-0581-9 (print) ; 978-1-7281-0579-6 (print) |
ISSN: | 1946-0201 (print) |
DOI: | 10.1109/ISPSD.2019.8757645 |
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