High-Fluence Proton-Induced Degradation on AlGaN/GaN High-Electron-Mobility Transistors
In: IEEE Transactions on Nuclear Science, Jg. 67 (2020-07-01), Heft 7, S. 1339-1344
Online
academicJournal
Zugriff:
Titel: |
High-Fluence Proton-Induced Degradation on AlGaN/GaN High-Electron-Mobility Transistors
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Autor/in / Beteiligte Person: | Yue, S. ; Lei, Z. ; Peng, C. ; Zhong, X. ; Wang, J. ; Zhang, Z. ; En, Y. ; Wang, Y. ; Hu, L. |
Link: | |
Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 67 (2020-07-01), Heft 7, S. 1339-1344 |
Veröffentlichung: | 2020 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) ; 1558-1578 (print) |
DOI: | 10.1109/TNS.2020.2974916 |
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