Optimized Work Function Metal Layer Damage Effect in Metal Gate BARC Etch Process by ICP Etch System
In: China Semiconductor Technology International Conference (CSTIC); (2020-06-26) S. 1-3
Online
Konferenz
Zugriff:
Titel: |
Optimized Work Function Metal Layer Damage Effect in Metal Gate BARC Etch Process by ICP Etch System
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Autor/in / Beteiligte Person: | Qian, Kai ; Liu, Shaoxiong ; Lu, Lian ; Li, Quanbo ; Huang, Jun ; Zhang, Yu |
Link: | |
Quelle: | China Semiconductor Technology International Conference (CSTIC); (2020-06-26) S. 1-3 |
Veröffentlichung: | 2020 |
Medientyp: | Konferenz |
ISBN: | 978-1-7281-6558-5 (print) |
DOI: | 10.1109/CSTIC49141.2020.9282507 |
Sonstiges: |
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