A 1-Tb Density 4b/Cell 3D-NAND Flash on 176-Tier Technology with 4-Independent Planes for Read using CMOS-Under-the-Array
In: IEEE International Solid-State Circuits Conference (ISSCC); Jg. 65 (2022-02-20) S. 1-3
Online
Konferenz
Zugriff:
Titel: |
A 1-Tb Density 4b/Cell 3D-NAND Flash on 176-Tier Technology with 4-Independent Planes for Read using CMOS-Under-the-Array
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Autor/in / Beteiligte Person: | Pekny, Ted ; Vu, Luyen ; Tsai, Jeff ; Srinivasan, Dheeraj ; Yu, Erwin ; Pabustan, Jonathan ; Xu, Joe ; Deshmukh, Srinivas ; Chan, Kim-Fung ; Piccardi, Michael ; Xu, Kevin ; Wang, Guan ; Shakeri, Kaveh ; Patel, Vipul ; Iwasaki, Tomoko ; Wang, Tongji ; Musunuri, Padma ; Gu, Carl ; Mohammadzadeh, Ali ; Ghalam, Ali ; Moschiano, Violante ; Vali, Tommaso ; Park, Jaekwan ; Lee, June ; Ghodsi, Ramin |
Link: | |
Quelle: | IEEE International Solid-State Circuits Conference (ISSCC); Jg. 65 (2022-02-20) S. 1-3 |
Veröffentlichung: | 2022 |
Medientyp: | Konferenz |
ISBN: | 978-1-6654-2800-2 (print) |
ISSN: | 2376-8606 (print) |
DOI: | 10.1109/ISSCC42614.2022.9731691 |
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