46% Peak PAE 28 GHz High Linearity Stacked-FET Power Amplifier IC with a Novel Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS
In: 17th European Microwave Integrated Circuits Conference (EuMIC); (2022-09-26) S. 165-168
Online
Konferenz
Zugriff:
Titel: |
46% Peak PAE 28 GHz High Linearity Stacked-FET Power Amplifier IC with a Novel Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS
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Autor/in / Beteiligte Person: | Sugiura, Tsuyoshi ; Yoshimasu, Toshihiko |
Link: | |
Quelle: | 17th European Microwave Integrated Circuits Conference (EuMIC); (2022-09-26) S. 165-168 |
Veröffentlichung: | 2022 |
Medientyp: | Konferenz |
ISBN: | 978-2-87487-070-5 (print) |
DOI: | 10.23919/EuMIC54520.2022.9923449 |
Sonstiges: |
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